Method of forming a low stress polycide conductors on a semiconductor chip

The method of forming a conductive line on the surface of a semiconductor substrate comprising the steps of:

• a) providing a deposition environment including a tool having a plurality of adjacent deposition chambers;
• b) placing a semiconductor substrate within a first deposition chamber;
• c) depositing a polycrystalline silicon layer on the surface of the substrate at a substantially constant rate to form two layers, the first layer consisting of
• d) having a first thickness of substantially uniformly doped polysilicon on the surface of the substrate and the second layer consisting of an undoped polysilicon having a thickness substantially less than said first layer;
• d) maintaining the substrate in a chemically inactive environment;
• e) moving the substrate from the first chamber to a second chamber within the tool while maintaining the substrate in said chemically inactive environment and preventing the substrate from being exposed to a chemically active environment;
• and
• f) forming a conductive silicide layer on the undoped polycrystalline layer.