Method for fabricating capacitor of semiconductor device
AssigneeLG Semicon Co., Ltd.
InventorYoo-Chan Jeon
Life of this patent
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Abstract
A method for fabricating a capacitor for a semiconductor device includes the steps of depositing an insulating layer on a substrate, selectively removing the insulating layer and forming a contact hole, forming a first electrode in the contact hole, removing the insulating layer to expose a portion of the first electrode, and sequentially forming a dielectric layer and a second electrode on the exposed portion of the first electrode.
Claims19
A method for fabricating a capacitor comprising the steps of:
- depositing an insulating layer on a substrate;
- selectively removing the insulating layer and forming a contact hole having a V-shape;
- forming a first electrode in the contact hole;
- removing the insulating layer to expose a portion of the first electrode;
- and
- sequentially forming a dielectric layer and a second electrode on the exposed portion of the first electrode.
A method for fabricating a capacitor comprising the steps of:
- depositing an insulating layer on a substrate;
- selectively removing the insulating layer and forming a contact hole including a recess region, the contact hole including the recess region having a first depth;
- forming a first electrode in the contact hole including the recess region, the first electrode having the first depth;
- removing the insulating layer to expose a portion of the first electrode so that the insulating layer has a second depth, the second depth being less than the first depth;
- and
- sequentially forming a dielectric layer and a second electrode on the exposed portion of the first electrode.
A method for fabricating a capacitor comprising the steps of:
- depositing an insulating layer on a substrate;
- selectively removing the insulating layer and forming a contact hole with a first depth;
- forming a first electrode with the first depth by sequentially forming a conductive semiconductor layer, a diffusion stop layer, and a metal layer in the contact hole;
- removing the insulating layer to expose the metal layer of the first electrode so that the insulating layer has a second depth, the second depth being less than the first depth;
- and
- sequentially forming a dielectric layer and a second electrode on the exposed metal layer.
A method for fabricating a capacitor comprising the steps of:
- depositing an insulating layer on a substrate;
- selectively removing the insulating layer and forming a contact hole with a first depth;
- sequentially forming a first metal layer, a first diffusion stop layer, and a conductive semiconductor layer on the insulating layer and the contact hole;
- etching the conductive semiconductor layer, the first diffusion stop layer, and the first metal layer to expose the insulating layer and forming a first electrode with the first depth;
- removing the insulating layer so that the insulating laver has a second depth which is less than the first depth;
- sequentially forming a second diffusion stop layer and a second metal layer on the first electrode;
- and
- forming a dielectric layer and a second electrode on the first metal layer and the second metal layer.
Dependencies are inferred from the claim text.