Semiconductor device and manufacturing method for the same

A semiconductor device having a multilayer interconnection structure, comprising:

• N number (N being an integer of 2 or greater) of layers of insulating film;
• at least one via hole provided between respective layers;
• at least one bonding pad connecting hole provided between respective layers;
• and
• at least one inspection opening provided in at least one of the layers of insulating film, the at least one inspection opening not comprising a via hole or a bonding pad connecting hole, wherein the at least one inspection opening is capable of being used during formation of the semiconductor device for allowing inspection during etching of the via hole.

A semiconductor device having a multilayer interconnection structure, comprising:

• N number (N being an integer of 2 or greater) of layers of insulating film;
• at least one via hole provided between respective layers;
• at least one bonding pad connecting hole provided between respective layers;
• and
• a plurality of inspection openings provided in at least one of the layers of insulating film, the plurality of inspection openings not comprising a via hole or a bonding pad connecting hole, wherein at least one of the plurality of inspection openings has an interconnection pattern provided therebelow and another of the plurality of inspection openings does not have an interconnection pattern provided therebelow, wherein the plurality of inspection openings are capable of being used during formation of the semiconductor device for allowing inspection during etching of the via hole.