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US 5,847,433 AGranted
Integrated switching circuit with CMOS circuit and method for producing isolated active regions of a CMOS circuit
AssigneeSiemens Aktiengesellschaft
InventorMartin Kerber
Life of this patent
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Abstract
In an integrated switching circuit with a CMOS circuit and a method for producing isolated active regions of the CMOS circuit, a field plate is doped jointly with wells located beneath it, so that the field plate includes an n-doped region and a p-doped region, and a boundary layer forms in a transition region. Upon electrical connection of the field plate regions with the particular well located beneath them, a flat band condition prevails at a substrate surface.
Claims6
An integrated switching circuit with a CMOS circuit, comprising:
- complementary doped wells sharing a boundary region;
- field plate regions each disposed above a respective one of said wells for electrically shielding said well located beneath it, each of said field plate regions doped with the same conduction type as a conduction type of said well located beneath it, and said field plate regions joined together in said boundary region of said wells;
- and
- a depletion layer disposed in said field plate region above said boundary region, formed by adjusting a dopant concentration in said field plate regions, separating adjacent field plate regions of different conduction type.
1 more element
Dependencies are inferred from the claim text.