Semiconductor device and method of manufacturing same
AssigneeNGK Insulators, Ltd.
InventorYoshio Terasawa
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Abstract
A normally-off semiconductor device with gate regions formed in a high-quality base is manufactured by forming a P.sup.+ layer in a lower surface of an N.sup.- substrate, selectively forming P.sup.+ gate regions in an upper surface of the N.sup.- substrate, forming intergate P.sup.+ regions in the upper surface of the N.sup.- substrate between the P.sup.+ gate regions, forming an N.sup.+ layer in an upper surface of an N.sup.- substrate, joining the N.sup.- substrate and the N.sup.- substrate to each other by heating them at about 800.degree. C. in a hydrogen atmosphere while the upper surface of the N.sup.- substrate and a lower surface of the N.sup.- substrate are being held against each other, and forming an anode electrode and a cathode electrode.
Claims6
A semiconductor device comprising an anode electrode;
- a cathode electrode;
- a semiconductor substrate disposed between said anode electrode and said cathode electrode and comprising first and second semiconductor layers;
- a gate disposed in said first semiconductor layer for controlling a current flowing between said anode electrode and said cathode electrode;
- said first semiconductor layer having cavities defined therein;
- said second semiconductor layer disposed over said cavities in said first semiconductor layer:
- gate regions of a semiconductor disposed on regions of said first semiconductor layer which are exposed on side walls of said cavities, thereby allowing an anode current to flow along said side walls;
- and
- a semiconductor region of the same conductivity type as said gate regions, which is disposed between said gate regions, forming intergate regions between the gate regions in respective adjacent cavities, such that a depletion layer is continuously spread between said gate regions when no bias is applied to said gate.
Dependencies are inferred from the claim text.