Method for in-situ incorporation of desirable impurities into high pressure oxides

A method for introducing an impurity into an oxide supported by a substrate, comprising the steps of:

• oxidizing the substrate at high pressure to form the oxide;
• incorporating an impurity, selected from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia, into the oxide at low pressure of approximately 50 to 100 psi after oxidizing the substrate at high pressure, wherein the oxidizing step comprises a higher pressure than the incorporating step;
• and
• heating the substrate to approximately 600 to 1,100 degrees Celsius at least after incorporating the impurity.

A method for introducing an impurity into an oxide, comprising the steps of:

• selecting an impurity from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen triflouride, and ammonia;
• placing at least one substrate in a processing chamber;
• flowing the impurity into the processing chamber at a pressure of greater than 50 psi;
• flowing an oxidizing ambient into the processing chamber;
• heating the processing chamber to a temperature sufficiently high to initially oxidize the substrate;
• and
• increasing the pressure in the processing chamber above 100 psi to further oxidize the substrate after flowing the impurity.

A method for introducing an impurity into an oxide, comprising the steps of:

• selecting an impurity from the group consisting of chlorine, flourine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia;
• placing at least one substrate in a high pressure processing chamber;
• oxidizing the substrate in the high pressure processing chamber under high pressure of greater than 100 psi and at an oxidizing temperature;
• decreasing the pressure in the processing chamber,
• flowing the impurity into the processing chamber at a pressure of 50 to 100 psi, to incorporate the impurity at the interface between the substrate and oxide.

A method for introducing an impurity into an oxide supported by a substrate, comprising the steps of:

• incorporating an impurity selected from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia into the substrate at low pressure of approximately 50 to 100 psi;
• oxidizing the substrate at high pressure after incorporating the impurity, wherein the high pressure is greater than 100 psi;
• and
• incorporating an impurity selected from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia into the oxide at low pressure of approximately 50 to 100 psi wherein the oxidizing comprises a higher pressure than when incorporating the impurity.

A method for introducing an impurity into an oxide supported by a substrate, comprising the steps of:

• selecting an impurity from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia;
• oxidizing the substrate at high pressure to form the oxide;
• incorporating the impurity into the oxide at low pressure of 50 to 100 psi, wherein the oxidizing step comprises a higher pressure than the incorporating step;
• and
• heating the substrate at least after incorporating the impurity.

A method for introducing an impurity into an oxide supported by a substrate, comprising the steps of:

• selecting impurity from the group consisting of chlorine, fluorine, bromine, iodine, astatine, nitrogen trifluoride, and ammonia;
• oxidizing the substrate at high pressure to form the oxide;
• incorporating the impurity into the oxide at low pressure of 50 to 100 psi, wherein oxidizing the substrate at high pressure comprises a pressure greater than 100 psi;
• and
• heating the substrate at least after incorporating the impurity.