Method for fabricating an Al-Ge alloy wiring of semiconductor device

A method for fabricating wiring of a semiconductor device, comprising the steps of:

• depositing an insulating film on a semiconductor substrate so as to form a contact hole in the insulating film;
• forming a barrier layer on the insulating film and the substrate;
• depositing a first aluminum alloy layer on the barrier layer at a temperature range of less than 150.degree. C.;
• heating the substrate on which the first aluminum alloy layer is formed at a temperature range of greater than 300.degree. C., prior to forming a second aluminum alloy layer;
• and
• depositing the second aluminum alloy layer containing Ge directly on the first aluminum alloy layer, the heating of the substrate continuing for a time period so that the first aluminum alloy layer and the second aluminum alloy layer containing Ge are merged to form an aluminum alloy wiring.

A method of fabricating wiring of a semiconductor device, comprising the steps of:

• depositing an insulating film on a semiconductor substrate;
• forming a contact hole through the insulating film;
• forming a barrier layer on the insulating film and the semiconductor substrate;
• forming a first metal alloy layer directly on the barrier layer;
• forming a second metal alloy layer having Ge on the first metal alloy layer;
• and
• annealing the semiconductor substrate and thereby substantially filling the contact hole with a third metal alloy layer having Ge, wherein the first metal alloy layer is an Al--Cu alloy, the second metal alloy layer is an Al--Ge alloy, and the third metal alloy layer is an Al--Cu--Ge alloy,
• wherein the steps of forming the first and second metal alloy layers include the steps of
• depositing the Al--Cu alloy on the barrier layer at a temperature range of less than 150.degree. C., and
• depositing the Al--Ge alloy on the Al--Cu alloy at a temperature range of less than 150.degree. C., and
• wherein the annealing step includes the step of.
• heating the semiconductor substrate at a temperature range of greater than 300.degree. C., after said depositing steps.