SOI-BiCMOS method

A method for manufacturing a lateral bipolar transistor and a MOSFET, comprising the steps of:

• a) laterally insulating a semiconductor layer and providing the semiconductor layer with a basic doping for electrical conduction of a first conductivity type;
• b) applying a stripe-shaped gate electrode onto the semiconductor layer adjoining a region provided for a base region and applying at least one gate electrode for a MOSFET;
• c) applying a dielectric layer over the semiconductor layer and the gate electrode;
• d) sequencing the following steps e) through h) in the sequence in which said steps e) through h are recited, sequencing the following steps i) through l) in the sequence in which said steps i through l are recited, and, after step l), the following steps m) and n) sequence successively;
• e) using a first mask with an opening that, with reference to a plane of the semiconductor layer, is present laterally next to the gate electrode on a side facing away from said region provided for said base region and that extends at least up to a region occupied by the gate electrode, introducing a first dopant for electrical conduction of the first conductivity type into the semiconductor layer and introducing a doping for a drain region of the MOSFET;
• f) removing the dielectric layer in the region of the opening of the first mask;
• g) introducing a second dopant for electrical conduction of the first conductivity type into the semiconductor layer;
• and
• h) removing the first mask;
• i) using a second mask having an opening that, with respect to the plane of the semiconductor layer, is present next to the gate electrode on a side facing toward the base region and that extends at least up to said region occupied by the gate electrode, introducing a third dopant for electrical conduction of the first conductivity type into the semiconductor layer;
• j) removing the dielectric layer in the base region;
• k) introducing a fourth dopant for electrical conduction of a second conductivity type opposite the first conductivity type into the region using a third mask, whereby the height of the fourth doping is selected such that the doping for electrical conduction of the first conductivity type predominates at a side of the base region facing away from the gate electrode;
• and
• l) removing the third mask employed in step k);
• m) using a fourth mask that has an opening in a region provided for a base terminal zone, introducing a dopant for electrical conduction of the second conductivity type into the semiconductor layer;
• and
• n) removing the fourth mask.

A method for manufacturing a lateral bipolar transistors of a first type and of a second type comprising the steps of:

• a) laterally insulating a semiconductor layer and providing the semiconductor layer with a basic doping for electrical conduction of a first conductivity type;
• b) applying a stripe-shaped gate electrode onto the semiconductor layer adjoining a region provided for a base region;
• c) applying a dielectric layer over the semiconductor layer and the gate electrode;
• d) sequencing the following steps e) through h) in the sequence in which said steps e) through h are recited, sequencing the following steps i) through l) in the sequence in which said steps i) through l are recited, and, after step l), the following steps m) and n) sequence successively;
• e) using a first mask with an opening that, with reference to a plane of the semiconductor layer, is present laterally next to the gate electrode on a side facing away from said region provided for said base region and that extends at least up to a region occupied by the gate electrode, introducing a first dopant for electrical conduction of the first conductivity type into the semiconductor layer;
• f) removing the dielectric layer in the region of the opening of the first mask;
• g) introducing a second dopant for electrical conduction of the first conductivity type into the semiconductor layer;
• and
• h) removing the first mask;
• i) using a second mask having an opening that, with respect to the plane of the semiconductor layer, is present next to the gate electrode on a side facing toward the base region and that extends at least up to said region occupied by the gate electrode, introducing a third dopant for electrical conduction of the first conductivity type into the semiconductor layer;
• j) removing the dielectric layer in the base region;
• k) introducing a dopant for electrical conduction of a second conductivity type opposite the first conductivity type into the region using a third mask, whereby the height of the fourth doping is selected such that the doping for electrical conduction of the first conductivity type predominates at a side of the base region facing away from the gate electrode;
• and
• l) removing the third mask employed in step k);
• m) using a fourth mask that has an opening in a region provided for a base terminal zone, introducing a dopant for electrical conduction of the second conductivity type into the semiconductor layer;
• n) removing the fourth mask;
• o) the steps a) through c) ensuing in common for the bipolar transistors to be manufactured and basic doping is thereby respectively produced with a conductivity type of emitter and collector of a type to be manufactured;
• p) the sequences of step d) being implemented for the first type of transistors to be manufactured;
• q) sequences of steps that corresponds to the sequences of step d) with respectively interchanged conductivity types being implemented for the second type of transistors to be manufactured;
• and
• in the sequences of step p), the step m) being implemented such that a step of the sequences of step q) corresponding to the step e) or the step i) occurs simultaneously therewith with dopant for the second conductivity type.