Resist pattern forming method using anti-reflective layer with variable extinction coefficient

A resist pattern forming method for etching a transparent film which is transparent to exposure light, comprising the steps of:

• forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to the exposure light;
• forming a resist film over the anti-reflective film;
• exposing a pattern onto the resist film so as to form an exposed resist film;
• and
• developing the exposed resist film to form a resist pattern;
• wherein the anti-reflective film is formed of a material containing a photoabsorptive compound that can be evaporated from a surface of the anti-reflective film by heat treatment, and wherein the anti-reflective film, after being formed over the substrate, is heat-treated so that an extinction coefficient of the anti-reflective film increases from a side of the anti-reflective film closest to the resist film toward a side closest to the substrate.

A resist pattern forming method for etching a transparent film which is transparent to exposure light, comprising the steps of:

• forming an anti-reflective film over a substrate, said substrate including a transparent film on a body, the transparent film being transparent to exposure light;
• forming a resist film over the anti-reflective film;
• exposing a pattern onto the resist film, so as to form an exposed resist film;
• and
• developing the exposed resist film to form a resist pattern;
• wherein the anti-reflective film is formed on the transparent film, and
• wherein the anti-reflective film is formed of two layers by successively stacking a first layer and then a second layer, and an extinction coefficient for the first layer for the exposure light is greater than that of the second layer.

A resist pattern forming method for etching a transparent film which is transparent to exposure light, comprising the steps of:

• forming over a substrate a first film that constitutes an anti-reflective film, said substrate including a transparent film on a body, the transparent film being transparent to exposure light;
• forming a resist film over the first film;
• exposing a pattern onto the resist film using the exposure light, so as to form an exposed resist film;
• and
• developing the exposed resist film to form a resist pattern;
• wherein the first film constituting the anti-reflective film is a two-layer film formed by successively stacking a first layer and second layer, the first layer is a layer that reflects the exposure light and the second layer is an interference anti-reflection layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an insulating film overlying a conductive film on a semiconductor substrate;
• forming an anti-reflective film over said insulating film;
• forming a resist film over the anti-reflective film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the first layer being a layer that reflects the exposure light and the second layer being an interference anti-reflection layer.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an insulating film overlying a conductive film on a semiconductor substrate;
• forming an anti-reflective film over said insulating film;
• forming a resist film over the anti-reflective film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of the semiconductor device;
• and
• developing the exposed resist film,
• wherein the anti-reflective film has an extinction coefficient for the exposure light that is not uniform in a direction of anti-reflective film thickness.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming an insulating film overlying a conductive film on a semiconductor substrate;
• forming an anti-reflective film over said insulating film;
• forming a resist film over the anti-reflective film;
• exposing the resist film to exposure light in a pattern, so as to form an exposed resist film, the pattern being a pattern for a component of a semiconductor device;
• and
• developing the exposed resist film,
• wherein the anti-reflective film is a two-layer film of a first layer closest to the substrate and a second layer on the first layer, the second layer being an interference anti-reflective layer and the first layer having a greater extinction coefficient for the exposure light than that of the second layer.