Pattern formation method

A pattern formation method comprising the steps of:

• conducting a surface treatment on a semiconductor substrate by supplying onto a surface of said semiconductor substrate a surface treatment agent, including a compound having a silyl group and an acid,
• wherein said compound included in said surface treatment agent is represented by a general formula:
• ##STR8## wherein R.sub.1, R.sub.2 and R.sub.3 indicate the same or different, saturated or unsaturated hydrocarbon groups each having 1 through 6 carbon atoms;
• and R.sub.4 indicates an alkyl group having 1 through 6 carbon atoms, an alkyl substituent having 1 through 6 carbon atoms, a phenyl group, a phenyl substituent, a benzyl group or a benzyl substituent;
• forming a resist film on said semiconductor substrate, whose surface has been treated with said surface treatment agent, by coating said semiconductor substrate with a chemically amplified resist;
• and
• forming a resist pattern by exposing said resist film by using a desired mask and subsequently conducting development.