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AssigneeAdvanced Micro Devices, Inc.
InventorsNicholas John Kepler, Asim A. Selcuk, Richard K. Klein, Craig S. Sander, John C. Holst, Christopher A. Spence, Raymond T. Lee, Stephen C. Horne
Estimating the term…
A static random access memory (SRAM) cell having increased cell capacitance at the storage nodes utilizes a capacitive structure. The capacitive structure includes a dielectric material between polysilicon conductive lines and tungsten local interconnects. The polysilicon plates are each connected to drains of lateral transistors associated with the SRAM cell. A dielectric material such as silicon dioxide may be deposited between the local interconnect and polysilicon conductive lines. The capacitor structures are provided between first and second N-channel pull down transistors associated with the SRAM cell.
A memory cell having enhanced cell capacitance, the memory cell comprising:
A SRAM memory cell comprising:
A method of manufacturing a capacitive structure for a memory cell including a first pull down transistor having a first gate and a first drain and a second pull down transistor having a second gate and a second drain, the method comprising:
Dependencies are inferred from the claim text.