Aluminum film for semiconductive devices

An aluminum film structure on a substrate assembly comprising:

• a substrate assembly;
• a refractory metal nitride layer upon said substrate assembly;
• a plurality of adjacent aluminum layers situated upon said refractory metal nitride layer each having a substantially uniform thickness of less than one micron and an upper surface, said upper surface having a plurality of aluminum grains that are substantially immobile such that substantially no grain boundary movement occurs, and each having therein substantially no voids larger than about one micron, wherein an interface is situated between each adjacent aluminum layer of said plurality of adjacent layers, and wherein substantially no voids are in contact with the interface between each adjacent layer of said plurality of adjacent aluminum layers.

An inter-level interconnect structure comprising:

• a substrate assembly;
• a buried semiconductor device on the substrate assembly;
• a plurality of adjacent concentric cylinders providing electrical communication to the buried semiconductor device, each of the plurality of concentric cylinders having a submicron sized and substantially uniform radius, and wherein substantially no voids exist that are greater than about the respective diameter of any of the plurality of adjacent concentric cylinders, and wherein substantially no voids exist between adjacent concentric cylinders that are greater thin about the respective diameter of any of the plurality of adjacent concentric cylinders.

An aluminum film structure comprising:

• a substrate assembly;
• a refractory metal nitride layer upon said substrate assembly;
• a plurality of adjacent aluminum layers situated upon said refractory metal nitride layer each having a substantially uniform thickness of less than one micron, and each having therein substantially no voids larger than about one micron, wherein an interface is situated between each adjacent aluminum layer of said plurality of adjacent layers, and wherein substantially no voids are in contact with the interface between each adjacent layer of said plurality of adjacent aluminum layers.

A contact structure comprising:

• a silicon layer;
• an active area within the silicon layer;
• a plurality of adjacent concentric aluminum cylinders in electrical communication with the active area, each said cylinder having a submicron sized and uniform radius, and wherein the plurality of adjacent concentric aluminum cylinders have therein a plurality of voids, wherein each said void is less that any a respective diameter of any of the cylinders.