Integrated inductor
AssigneeNational Semiconductor Corporation
InventorsRichard Billings Merrill, Donald M. Archer
Life of this patent
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Abstract
An integrated inductor with filled etch includes a substrate of semiconductor material which includes a surface and a cavity disposed therein, a mass of dielectric material disposed within the cavity, a layer of dielectric material disposed upon the mass of dielectric material, and a patterned layer of conductive material disposed upon the layer of dielectric material, such that the integrated inductor is formed without an oxide bridge. Thus, the integrated inductor has a rugged architecture.
Claims11
An apparatus including an integrated patterned mass of conductive material useful for fabricating an integrated inductor, comprising:
- a substrate of semiconductor material which includes a surface and a cavity disposed therein;
- a mass of dielectric material disposed within said cavity;
- and
- a patterned layer of conductive material disposed upon said mass of dielectric material, such that said integrated inductor is formed without suspension, wherein
- said substrate of semiconductor material has a thickness;
- said cavity has a depth;
- and
- said depth of said cavity is less than said thickness of said substrate.
An apparatus including an integrated patterned mass of conductive material useful for fabricating an integrated inductor, comprising:
- a substrate of semiconductor material which includes a surface and a cavity disposed therein;
- a mass of dielectric material disposed within said cavity;
- a layer of dielectric material disposed upon said mass of dielectric material;
- and
- a patterned layer of conductive material disposed upon said layer of dielectric material, such that said integrated inductor is formed without a support bridge, wherein
- said substrate of semiconductor material has a thickness;
- said cavity has a depth;
- and
- said depth of said cavity is less than said thickness of said substrate.
An apparatus including an integrated patterned mass of conductive material useful for fabricating an integrated inductor, consisting of:
- a substrate of semiconductor material which includes a surface and a cavity disposed therein;
- a mass of dielectric material disposed within said cavity;
- and
- a patterned layer of conductive material disposed upon said mass of dielectric material, such that said integrated inductor is formed without suspension or a support bridge, wherein
- said substrate of semiconductor material has a thickness,
- said cavity has a depth, and
- said depth of said cavity is less than said thickness of said substrate.
Dependencies are inferred from the claim text.