Semiconductor device with improved dielectric breakdown strength
AssigneeRohm Co., Ltd.
InventorTetsuya Tominaga
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Abstract
A semiconductor device is provided with improved resistance to dielectric breakdown due to high voltage resulting from static electricity applied to a dielectric film thereof, where a conductive film such as a resistance film or a electrode film is provided on a semiconductor substrate through the dielectric film in a manner electrically out of direct connection to the substrate. Embodiments include a conductor film pattern in electrical connection with the substrate, and at least one of the conductive film or the conductor film pattern is provided with a projecting portion to provide a narrow gap therebetween, thereby serving as a bypass to discharge static electricity.
Claims8
A semiconductor device comprising:
- a semiconductor substrate including electronic elements formed therein;
- a dielectric film formed over a surface of said substrate;
- a conductive film, having a length substantially greater than the width thereof, formed on said dielectric film and out of direct electrical connection with said semiconductor substrate;
- a conductor film pattern, having a length substantially greater than the width thereof, formed in direct electrical connection with said semiconductor substrate;
- and
- a projecting portion provided in a small portion of the length of at least one of said conductive film and said conductor film pattern to provide a narrow gap extending for a short distance between said conductive film and said conductor film pattern.
A semiconductor device having a semiconductor substrate including electronic elements formed therein and a dielectric film formed over a surface thereof, said semiconductor device comprising:
- a conductive film formed on said semiconductor substrate through said dielectric film in a manner out of direct connection with said semiconductor substrate;
- a conductor film patter formed in direct connection with said semiconductor substrate;
- and
- a projecting portion provided in at least one of said conductive film and said conductor film pattern to provide a gap between said conductive film and said conductor film pattern,
- wherein said semiconductor device comprises a transistor of the built-in-resistance type, and said conductive film is formed by a resistive film of polysilicon comprising said built-in-resistance.
Dependencies are inferred from the claim text.