Back to results
US 5,844,284 AGranted
Damage free buried contact using salicide technology
OwnerMing-Hsi Liuinventor
Life of this patent
Estimating the term…
Abstract
A semiconductor cell with a buried contact uses highly selective etching techniques in combination with a thin oxide etching stop to prevent damage to the buried contact during the etching process. A cavity is formed in the oxide layer between the buried contact and its adjacent interconnect polysilicon element. A self-aligning silicide process (salicide) is used to coat the interconnect polysilicon, the cavity, and the buried contact, to form a continuous electrical connection between the interconnect polysilicon and the buried contact.
Claims9
A semiconductor cell comprising:
- a damage free buried contact region within a substrate,
- a polysilicon region disposed on a surface of said substrate, such that a portion of said polysilicon region overlaps an underlying portion of said buried contact region,
- an oxide layer having a cavity, said layer and said cavity being disposed between said polysilicon region and said underlying portion of said buried contact region,
- a single continuous silicide region overlaying said polysilicon region and said buried contact region, and filling said cavity so that said single continuous silicide region provides an electrical connection between said polysilicon region, said cavity, and said buried contact region.
1 more element
A semiconductor cell comprising:
- a buried contact region within a substrate,
- a polysilicon region disposed on a surface of said substrate, such that a portion of said polysilicon region overlaps an underlying portion of said buried contact region,
- an oxide layer having a cavity, said layer and said cavity being disposed between and in contact with said polysilicon region and said underlying portion of said buried contact region,
- a single continuous silicide region overlaying said polysilicon region and said buried contact region, and filling said cavity so that said single continuous silicide region provides an electrical connection between said polysilicon region, said cavity, and said buried contact region.
1 more element
Dependencies are inferred from the claim text.