Emitter switched thyristor
AssigneeSamsung Electronics Co., Ltd.
InventorKwang-Hoon Oh
Life of this patent
Estimating the term…
Abstract
An emitter switched thyristor has an enlarged safe operating range. A semiconductor substrate of a first conductivity type (a p-type) is provided and a semiconductor region of a second conductivity type (an n-type) is formed on the substrate. A well region of the first conductivity type is formed within the semiconductor region, and a plurality of well subregions of the second conductivity type are formed within the well region. The well subregions are all separated from each other by a separating portion of the well region. A plurality of electrode contacts are provided, including a gate electrode in contact with the well region and at least first and second cathode electrodes. The second cathode electrode is in contact with the separating portion of the well region.
Claims27
An emitter switched thyristor comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor region of a second conductivity type area formed on said substrate;
- a well region of said first conductivity type formed within said semiconductor region;
- a plurality of well subregions of said second conductivity type formed within said well region and separated by a separating portion of said well region;
- and
- a plurality of electrode contacts comprising a gate electrode in contact with said well region and at least first and second cathode electrodes, said first cathode electrode being in contact with one of said well subregions and said second cathode electrode being in contact with said separating portion of said well region between said plurality of well subregions.
An emitter switched thyristor comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor region of a second conductivity type area formed on said substrate;
- a well region of said first conductivity type formed within said semiconductor region;
- a plurality of well subregions of said second conductivity type formed within said well region and separated by a separating portion of said well region;
- and
- a plurality of electrode contacts comprising a gate electrode in contact with said well region and at least first and second cathode electrodes, said first cathode electrode being in contact with one of said well subregions and said second cathode electrode being in contact with said separating portion of said well region;
- and
- wherein said well region comprises an impurity density distribution which is not uniform.
An emitter switched thyristor comprising:
- a semiconductor substrate of a first conductivity type;
- a semiconductor region of a second conductivity type area formed on said substrate;
- a well region of said first conductivity type formed within said semiconductor region;
- a plurality of well subregions of said second conductivity type formed within said well region and separated by a separating portion of said well region;
- and
- a plurality of electrode contacts comprising a gate electrode in contact with said well region and at least first and second cathode electrodes, said first cathode electrode being in contact with the top of one of said well subregions and said second cathode electrode being in contact with the top of said separating portion of said well region.
Dependencies are inferred from the claim text.