Method of plasma etching
AssigneeSony Corporation
InventorShusaku Yanagawa
Life of this patent
Estimating the term…
Abstract
There is provided a process which assures a large etching selectivity for resist mask or interlayer insulating film and excellent anisotropy and results in lesser particle contamination and after-corrosion by mainly constituting, with a decomposition byproduct of resist mask, a side wall protection film material which is indispensable for anisotropic etching in the plasma etching of an Al-based metal and by enhancing ion impact resistance and radical attack resistance through reinforcement of film quality to obtain sufficient side wall protection film even when an amount of deposition of the side wall protection film is reduced.
Claims13
A method of plasma etching of an Al-based metal layer wherein said Al-based metal layer is etched using an etching gas comprising a positive amount of HCl and a positive amount of boron halogenide, wherein a volume ratio of HCl in said etching gas is greater than 90%, and wherein said etching gas further includes boron halogenide gas in the volume ratio of under 10%.
A method of plasma etching of an Al-based metal layer comprising a first patterning process for main etching of said Al-based metal layer using an etching gas comprising HCl and a second patterning process for over-etching of said Al-based metal layer into an underlayer of the Al-based metal layer, wherein an etching rate of the etching gas is decreased during etching of said underlayer, wherein a volume ratio of HCl in said etching gas is greater than or equal to 90% in said first and second patterning processes.
A method of plasma etching of an Al-based metal layer comprising a first patterning process for main etching of said Al-based metal layer using an etching gas comprising HCl and a second patterning process for over-etching of said Al-based metal layer into an underlayer of the Al-based metal layer, wherein an etching rate of the etching gas is decreased during etching of said underlayer, and wherein an etching gas further includes boron halogenide gas in a volume ratio under 10% in said first and second patterning processes.
Dependencies are inferred from the claim text.