Method for forming sloped contact hole for semiconductor device
AssigneeLG Semicon Co., Ltd.
InventorSeong Woo Chung
Life of this patent
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Abstract
A method for forming a contact hole for a semiconductor device includes forming an insulation layer on a substrate and forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern. The insulation layer is etched using the photoresist film pattern as a mask using a high density plasma etcher of an inductively coupled plasma type. The photoresist film is removed to form a contact hole having a sloped side wall.
Claims14
A method for forming a contact hole for a semiconductor device, the method comprising the steps of:
- forming an insulation layer on a substrate;
- forming a photoresist film pattern on the insulation layer and exposing a portion of the insulation layer corresponding to the photoresist film pattern;
- etching the insulation layer using the photoresist film pattern as a mask and using an inductively coupled plasma in the environment of a chemical gas combination including one of C.sub.2 F.sub.6 /polymer formation gas or C.sub.3 F.sub.8 /polymer formation gas,
- wherein each polymer formation gas includes one of CO or CH.sub.3 F;
- and
- removing the photoresist film to form a contact hole having a sloped side wall.
A method for forming a contact hole for a semiconductor device, the method comprising the steps of:
- forming an insulating layer on a substrate;
- forming a photoresist film pattern on the insulating layer and exposing a portion of the insulating layer corresponding to the photoresist pattern;
- etching the insulation layer using the photoresist film pattern as a mask using a plasma etcher under a gas environment including a gas combination of a polymer formation gas and one of C.sub.2 F.sub.6 or C.sub.3 F.sub.8, a bias power of about 700 W-1500 W applied to the etcher, and a source power of about 800 W-3000 W applied to the etcher;
- and
- removing the photoresist film to form a contact hole having a sloped side wall.
Dependencies are inferred from the claim text.