Fabrication process of a semiconductor integrated circuit device having a local interconnect pattern and a semiconductor integrated circuit device fabricated according to such a fabrication process

Abstract

A method for fabricating a semiconductor integrated circuit includes the steps of providing a conductor film on a substrate, providing an insulator film on the conductor film to form a layered structure, removing the insulator film selectively from a first part thereof corresponding to a conductor pattern to be formed, while remaining the insulator film on a second part thereof corresponding also to a conductor pattern to be formed, patterning the layered structure to form a conductor pattern defined by side walls, providing a side wall insulation to each of the side walls of the conductor pattern, providing a first local interconnect pattern on the first part of the conductor pattern such that the first local interconnect pattern establishes an electrical connection with the conductor pattern at the first part, and providing a second local interconnect pattern on the second part of the conductor pattern such that the second local interconnect pattern bridges across the conductor pattern at the second part, without establishing electrical connection therewith.

Dependencies are inferred from the claim text.