Capacitor, and methods for forming a capacitor

A method for forming a capacitor comprising:

• providing a substrate having a node location to which electrical connection to a capacitor is to be made;
• forming a diffusion barrier layer over the node location;
• forming an inner capacitor plate over the diffusion barrier layer, the inner capacitor plate and diffusion barrier layer being patterned to respectively have an exposed sidewall;
• forming an oxidation barrier layer over the inner capacitor plate sidewall and the diffusion barrier layer sidewall and atop the inner capacitor plate;
• forming an oxide layer atop the oxidation barrier layer;
• forming a capacitor dielectric plate over the inner capacitor plate, the oxidation barrier layer restricting oxidation of at least the inner capacitor plate sidewall during provision of the capacitor dielectric plate;
• and
• forming an outer capacitor plate over the capacitor dielectric plate.

A method for forming a capacitor, comprising:

• providing a substrate having a node location to which electrical connection to a capacitor is to be made;
• forming an inner capacitor plate over the node location, the inner capacitor plate having an exposed sidewall;
• forming a first dielectric layer over the sidewall of the inner capacitor plate;
• forming a second dielectric layer over the first dielectric layer;
• planarizing the second dielectric layer relative to the first dielectric layer;
• and
• removing the first dielectric layer from over the inner capacitor plate.

A method for forming a capacitor, comprising:

• providing a substrate having a node;
• forming an inner capacitor plate having a top surface and sidewall over the node;
• forming an oxidation barrier layer over the top surface and sidewall of the inner capacitor plate;
• forming a dielectric layer over the oxidation barrier layer;
• forming a capacitor dielectric plate atop the oxidation barrier layer, the oxidation barrier layer restricting oxidation of sidewall of the inner capacitor plate;
• and
• forming an outer capacitor plate over the capacitor dielectric plate.

A method for forming a capacitor, comprising:

• providing a substrate having a node;
• providing an electrical component having a top surface and sidewall over the node;
• forming an oxidation barrier layer over the top surface and sidewall of the electrical component;
• forming a dielectric layer over the oxidation barrier layer;
• planarizing the dielectric layer relative to the oxidation barrier layer;
• and
• removing the oxidation barrier layer from atop the electrical component.