Crystal growth method for gallium nitride films

Abstract

A crystal growth method for growing on a gallium arsenide (GaAs) substrate a gallium nitride (GaN) film which is good in surface flatness and superior in crystallinity. According to the method, a GaAs substrate having a surface which is inclined with respect to the GaAs(100) face is used. The inclination angle of the substrate surface is larger than 0 degree but smaller than 35 degrees with respect to the GaAs(100) face. The inclination direction of the substrate surface is within a range of an angular range from the ›0,0,1! direction of GaAs to the ›0,-1,0! direction past the ›0,-1,1! direction and angles less than 5 degrees on opposite sides of the angular range around an ›1,0,0! direction of gallium arsenide taken as an axis, or within another range crystallographically equivalent to the range. The GaN layer is formed on the surface of the GaAs substrate preferably by hydride vapor deposition method.

Dependencies are inferred from the claim text.