Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element

A thin film transistor comprising:

• an insulation base;
• a first gate electrode formed on said insulation base;
• a first insulation layer formed on said first gate electrode and on said insulation base so as to cover said first gate electrode;
• an active layer of semiconductor material, formed on said first insulation layer and on said insulation base, a source region and a drain region being formed in said active layer;
• a source electrode electrically coupled to said source region formed in said active layer;
• a drain electrode electrically coupled to said drain region formed in said active layer;
• a second insulation layer formed on said active layer;
• and
• a second gate electrode formed on said second insulation layer, said second gate electrode being disposed in the opposite side of said first gate electrode with respect to said active layer,
• wherein a lateral length of said first gate electrode is narrower than a lateral length of said second gate electrode, and said first insulation layer electrically insulates said first gate electrode from said active layer of semiconductor material so that drain current saturates in a high drain voltage region.