Method for dry etching of transition metals

A method for dry etching of a transition metal on a substrate, comprising the steps of:

• (a) providing a substituted phosphine ligand selected from the group consisting of PCl.sub.2 OR, PCl.sub.2 R, PBr.sub.2 R, PCl(OR).sub.2 and PClR.sub.2 in proximity to the transition metal;
• and
• (b) etching the transition metal and forming a volatile complex comprising the substituted phosphine ligand and the transition metal.

A method for dry etching of a transition metal on a substrate comprising the steps of:

• (a) providing at least one nitrogen- or phosphorous-containing .pi.-acceptor ligand selected from the group consisting of isonitrile (RNC), cyanide (CN), isocyanide (RCN), phosphine ligands, substituted phosphine ligands and phosphite ligands in proximity to the transition metal in the form of an alloy selected from the group consisting of transition metal silicides, transition metal nitrides, and transition metal carbides;
• and
• (b) etching the transition metal and forming a volatile complex comprising the 90 -acceptor ligand and the transition metal.

A method for dry etching of a transition metal on a substrate, comprising the steps of:

• (a) providing at least one nitrogen-containing .pi.-acceptor ligand selected from the group consisting of isonitrile (RNC), cyanide (CN), and isocyanide (RCN) in proximity to the transition metal in the form of an alloy selected from the group consisting of transition metal silicides, transition metal nitrides, and transition metal carbides;
• and
• (b) etching the transition metal and forming a volatile complex comprising the .pi.-acceptor ligand and the transition metal.

A method for dry etching of a transition metal on a substrate, comprising the steps of:

• (a) providing a phosphite .pi.-acceptor ligand comprising P(OR).sub.3 in proximity to the transition metal;
• and
• (b) etching the transition metal and forming a volatile complex comprising the .pi.-acceptor ligand and the transition metal.

A method for dry etching of a transition metal on a substrate, comprising the steps of:

• (a) providing at least one substituted phosphine .pi.-acceptor ligand selected from the group consisting of PCl.sub.2 OR, PCl.sub.2 R, PBr.sub.2 R, PCl(OR).sub.2 and PClR.sub.2 in proximity to the transition metal;
• and
• (b) etching the transition metal and forming a volatile complex comprising the .pi.-acceptor ligand and the transition metal.

A method for dry etching of a transition metal on a substrate, comprising the steps of:

• (a) providing at least one phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal in the form of an alloy selected from the group consisting of transition metal silicides, transition metal nitrides, and transition metal carbides;
• and
• (b) etching the transition metal and forming a volatile complex comprising the .pi.-acceptor ligand and the transition metal.

A method for dry etching of a transition metal on a substrate comprising the steps of:

• (a) providing at least on nitrogen- or phosphorous-containing .pi.-acceptor ligand in proximity to the transition metal in the form of an alloy selected from the group consisting of transition metal silicides, transition metal nitrides, and transition metal carbides;
• and
• (b) etching the transition metal and forming a volatile complex comprising the .pi.-acceptor ligand, the transition metal and an organic ligand.