Temperature-measuring-resistor, manufacturing method therefor, ray detecting element using the same
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsAkira Yamada, Takehiko Sato, Toshihisa Honda, Toshio Umemura, Fusaoki Uchikawa
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Abstract
The invention relates to a temperature-measuring-resistor which comprises vanadium oxide as a matrix material. The matrix material further contains at least one member selected from a metal, a metal oxide and a metal nitride, and the member has an electric conductivity higher than that of the vanadium oxide. The temperature-measuring-resistor has a low room temperature resistivity, and a volume resisivity that varies greatly with temperature.
Claims22
A temperature-measuring-resistor comprising vanadium oxide as a matrix material, wherein the matrix material comprises at least one member selected from the group consisting of a metal, a metal oxide, and a metal nitride, wherein said metal comprises at least one metal selected from the group consisting of platinum, iridium, rhodium and gold, wherein said metal oxide comprises at least one metal oxide selected from the group consisting of a ruthenium oxide, a platinum oxide, an iridium oxide, a rhodium oxide, a rhenium oxide, an osmium oxide, a tungsten oxide, a molybdenum oxide, a tin oxide, and a titanium oxide, and wherein said member has an electric conductivity higher than that of said vanadium oxide.
A method of manufacturing a temperature-measuring-resistor comprising vanadium oxide as a matrix material, wherein the matrix material comprises at least one member selected from the group consisting of a metal, a metal oxide, and a metal nitride, wherein said metal is platinum, iridium, rhodium or gold, wherein said metal oxide is ruthenium oxide, a platinum oxide, an iridium oxide, a rhodium oxide, a rhenium oxide, an osmium oxide, a tungsten oxide, a molybdenum oxide, a tin oxide, or a titanium oxide, and wherein said member has an electric conductivity higher than that of said vanadium oxide;
- the method comprises a step of vapor-deposition under a gas atmosphere by using, as vapor deposition sources, a first material for forming vanadium oxide and a second material for forming at least one member selected from the group consisting of the metal, the metal oxide and the metal nitride.
A device comprising a temperature-measuring-resistor which includes a vanadium compound comprising vanadium, oxygen and nitrogen.
A method of manufacturing a temperature-measuring-resistor comprising a vanadium compound which contains vanadium, oxygen and nitrogen, wherein the method comprises a step of reactive physical vapor-deposition under a gas atmosphere which contains a nitriding gas and may contain an oxidizing gas, by using, as a vapor-deposition source, a material containing at least one of vanadium or vanadium oxide.
An infrared-ray detecting element which comprises an insulative support film, a pair of electrodes formed thereon, and a temperature-measuring-resistor connected to the electrodes, said temperature-measuring-resistor comprises vanadium oxide as a matrix material, wherein the matrix material contains at least one member selected from the group consisting of a metal, a metal oxide and a metal nitride, wherein said metal is platinum, iridium, rhodium or gold, wherein said metal oxide is a ruthenium oxide, a platinum oxide, an iridium oxide, a rhodium oxide, a rhenium oxide, an osmium oxide, a tungsten oxide, a molybdenum oxide, a tin oxide, or a titanium oxide, and wherein said member has an electric conductivity higher than that of said vanadium oxide.
An infrared-ray detecting element which comprises an insulative support film, a pair of electrodes formed thereon and a temperature-measuring-resistor connected to the electrodes, said temperature-measuring-resistor comprises a vanadium compound containing vanadium, oxygen and nitrogen.
Dependencies are inferred from the claim text.