Back to results
US 5,783,489 AGranted
Multi-oxidizer slurry for chemical mechanical polishing
AssigneeCabot Corporation
InventorsVlasta Brusic Kaufman, Shumin Wang
Life of this patent
Estimating the term…
Abstract
A chemical mechanical polishing slurry comprising at least two oxidizing agents, an organic acid and an abrasive and a method for using the chemical mechanical polishing slurry to remove titanium, titanium nitride, and an aluminum alloy containing layer from a substrate.
Claims38
A chemical mechanical polishing slurry comprising:
- an aqueous medium of;
- an abrasive;
- from about 0.2 to about 10.0 weight percent of a first oxidizer;
- from about 0.5 to about 10.0 weight percent of a second oxidizer;
- and
- from about 0.5 to about 15.0 weight percent of at least one organic acid, wherein the pH of the chemical mechanical polishing slurry ranges from about 2.0 to about 8.0.
3 more elements
A chemical mechanical polishing slurry comprising:
- an aqueous medium;
- from about 1.0 to about 9.0 weight percent alumina;
- from about 0.5 to about 10.0 weight percent hydrogen peroxide;
- from about 0.2 to about 10.0 weight percent ammonium persulfate;
- and
- from about 0.5 to about 5.0 weight percent succinic acid, wherein the pH of the chemical mechanical polishing slurry ranges from about 2.0 to about 8.0.
3 more elements
A method for polishing a substrate including at least one metal layer comprising the steps of:
- (a) admixing, from about 1.0 to about 9.0 weight percent of an abrasive, from about 0.2 to about 10.0 weight percent of a first oxidizer, from about 0.5 to about 10.0 weight percent of a second oxidizer, from about 0.5 to about 3.0 weight percent of at least one organic acid, and deionized water to give a chemical mechanical polishing slurry;
- (b) applying the chemical mechanical polishing slurry to the substrate;
- and
- (c) removing at least a portion of the metal layer from the substrate by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
1 more element
A method for polishing a substrate including a titanium adhesion layer, a titanium nitride layer and an aluminum alloy containing layer comprising:
- (a) admixing, hydrogen peroxide, ammonium persulfate, succinic acid, and alumina with deionized water to give a mechanical chemical polishing slurry comprising from about from about 1.0 to about 9.0 weight percent alumina, from about 0.2 to about 10.0 weight percent ammonium persulfate, from about 0.5 to about 10.0 weight percent hydrogen peroxide, and from about 0.5 to about 3.0 succinic acid, wherein the pH of the chemical mechanical polishing slurry ranges from about 2.0 to about 8.0 and wherein the titanium to aluminum alloy polishing selectivity ranges from about 2:1 to about 1:2;
- (b) applying the chemical mechanical polishing slurry to the substrate;
- and
- (c) removing a least a portion of the titanium adhesion layer, at least a portion of the titanium nitride layer and at least a portion of the aluminum alloy layer by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
1 more element
Dependencies are inferred from the claim text.