Semiconductor diamond device having improved metal-diamond contact for excellent operating stability at elevated temperature
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshiki Nishibayashi, Hiromu Shiomi, Shin-ichi Shikata
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprising an electrode formed on a semiconductor diamond. The electrode includes a first metal section which is in contact with a surface of the semiconductor diamond and which has a thickness of 100 nm or smaller, and further including a second metal section which is in contact with the first metal section and which has a thickness of equal to or larger than four times the thickness of the first metal section. The second metal section is made of a metal having a melting point of 1000.degree. C. or higher.
Claims13
A semiconductor device comprising:
- a) an n-type semiconductor diamond;
- and
- b) an electrode including:
- (i) a first metal section, being in contact with a surface of said n-type semiconductor diamond, having a thickness of 100 nm or less, having a melting point of 700.degree. C. or less, and having a work function of equal to or smaller than 5.0 eV;
- and
- (ii) a second metal section, being in contact with said first metal section and having a thickness of equal to or larger than four times the thickness of said first metal section,
- wherein said second metal section consists of a metal, melting point of which is equal to or higher than 1,000.degree. C.
A semiconductor device comprising:
- a) a p-type semiconductor diamond;
- and
- b) an electrode including
- a first metal section which is in contact with a surface of said p-type semiconductor diamond and has a thickness of 100 nm or smaller, and
- a second metal section which is in contact with said first metal section and has a thickness of equal to or larger than four times the thickness of said first metal section,
- wherein said second metal section consists of a metal, melting point of which is 1,000.degree. C. or higher, and wherein said p-type semiconductor diamond makes a Schottky contact with said first metal section of said electrode.
Dependencies are inferred from the claim text.