Semiconductor device balancing thermal expansion coefficient mismatch

A semiconductor device comprising:

• a semiconductor chip;
• a substrate having a thermal expansion coefficient, a first surface, a second surface opposite the first surface, and a side surface coupling the first and second surfaces, the semiconductor chip overlying the first surface;
• and
• a material coupled to the substrate, the material having a thermal expansion coefficient different from the thermal expansion coefficient of the substrate, a first portion of the material having a thickness over the first surface of the substrate and located under the semiconductor chip, a second portion of the material having a thickness over the second surface of the substrate, a third portion of the material having a thickness over the side surface of the substrate wherein the thickness of the third portion of the material is greater than the thickness of the first portion of the material and is greater than the thickness of the second portion of the material and wherein the third portion of the material has a hole extending through the third portion of the material wherein the hole extends in a direction perpendicular to the direction of the thickness of the third portion of the material.

A semiconductor component comprising:

• a semiconductor chip;
• a substrate with a thermal expansion coefficient, a first surface, a second surface opposite the first surface, and a side surface coupling the first and second surfaces;
• and
• a material coupled to the substrate and having a thermal expansion coefficient different from the thermal expansion coefficient of the substrate, a first portion of the material adjacent to the first surface of the substrate and having a thickness, a second portion of the material adjacent to the second surface of the substrate and having a thickness, and a third portion of the material adjacent to the side surface of the substrate and having a thickness greater than the thicknesses of the first and second portions of the material and wherein the thermal expansion coefficients of the material and the substrate produce a first thermal expansion coefficient mismatch along the first surface of the substrate and produce a second thermal expansion coefficient mismatch along the second surface of the substrate and wherein the thickness of the second portion of the material is less than or equal to the thickness of the first portion of the material such that the first thermal expansion coefficient mismatch is substantially balanced across the substrate by the second thermal expansion coefficient mismatch to minimize a net thermal expansion coefficient mismatch across the substrate and wherein the thicknesses of the first, second, and third portions of the material are measured perpendicularly from the first, second, and side surfaces, respectively.