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AssigneeU.S. Philips Corporation
InventorsJohannes F. M. Cillessen, Paulus W. M. Blom, Ronald M. Wolf, Jacobus B. Giesbers
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A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13). The device is capable of comparatively fast switching.
A semiconductor device with a transparent switching element with two connection electrodes of transparent material and an interposed transparent channel region of a semiconductor material provided with a transparent gate electrode of conductive material separated from the channel region by a transparent insulating layer, characterized in that the semiconductor material comprises a degenerate semiconductor material with a basic material having a bandgap between the conduction and the valence bands of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level adjacent or in the valence or conduction band of the basic material.
Dependencies are inferred from the claim text.