Photo mask and method for manufacturing same
AssigneeSamsung Electronic Co., Ltd.
InventorsWoo-sung Han, Chang-jin Sohn
Life of this patent
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Abstract
A photo mask and method for manufacturing the same increase the capacitance of a capacitor by improving the proximity effect of a mask pattern. The photo mask includes a transparent substrate, an opaque mask pattern for defining an optical transmission area on the substrate, and an optical transmittance control film pattern for suppressing proximity effect in the optical transmission area. The proximity effect is suppressed by forming an optical transmittance control film pattern in the transmission area between the individual portions of the opaque mask pattern, so that the mask pattern shape can be exactly transferred onto a substrate.
Claims19
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photoresist, comprising:
- a transparent substrate;
- an opaque mask element formed on the substrate, wherein the opaque mask element blocks light to define an optical transmission area adjoining edges of the opaque mask element that intersect to form a corner;
- and
- an optical transmittance control pattern formed in a portion of the optical transmission area near said corner of said opaque mask element, for reducing rounding of the shadow of said corner during said photolithographic procedure.
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising:
- a transparent substrate;
- a rectangular opaque mask element formed on the substrate, wherein the rectangular opaque mask element selectively blocks light to define an optical transmission area surrounding the edges of the rectangular opaque mask element, which edges meet at corners of said rectangular opaque mask element;
- and,
- an optical transmittance control pattern formed in portions of the optical transmission area near the corners of the rectangular opaque mask element, for reducing rounding of corners of the shadow of said rectangular opaque mask element during said photolithographic procedure.
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising:
- a transparent substrate;
- an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area;
- and
- an optical transmittance control pattern for suppressing rounding of the corners of shadows of said rectangular shaped masking portions during said photolithography, respective portions of the optical transmittance control pattern being formed at the intersections of respective columnar and row-wise optical transmission areas.
A clear-field photo mask for transferring a mask pattern onto a semiconductor wafer in a photolithographic procedure using a positive photo-resist, comprising:
- a transparent substrate;
- an opaque mask pattern formed on the substrate, wherein the opaque mask pattern includes an array of rectangular shaped masking portions arranged in rows and columns for selectively blocking light, such that rectangular shaped masking portions adjacent to each other in each row are separated by a respective columnar optical transmission area, and such that rectangular shaped masking portions adjacent to each other in each column are separated by a respective row-wise optical transmission area;
- and
- means for suppressing rounding of the corners of shadows of said rectangular shaped masking portions at each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area during said photolithography, which means includes:
- a first optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective columnar optical transmission area extending from each side of that said intersection, and
- a second optical transmittance control pattern having a respective portion covering each intersection of one said respective columnar optical transmission area and one said row-wise optical transmission area and covering portions of that one said respective row-wise optical transmission area extending from each side of that said intersection.
A method of manufacturing a photo mask, comprising the steps of:
- selectively forming an opaque mask pattern which defines an optical transmission area on a substrate;
- forming an optical transmittance control film over the opaque mask pattern and substrate;
- and
- patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
A method of manufacturing a photo mask, comprising the steps of:
- forming an opaque mask pattern which defines an optical transmission area on a substrate;
- forming an etch-stopping film on the opaque mask pattern and the substrate;
- forming an optical transmittance control film on the etch--stopping film;
- and
- patterning the optical transmittance control film such that portions of the optical transmittance control film are disposed in the optical transmission area between edges of the opaque mask pattern.
A method for manufacturing a photo mask, comprising the steps of:
- forming an opaque mask pattern defining an optical transmission area on a substrate;
- forming a photoresist film over the opaque mask pattern and substrate;
- exposing the optical transmission area on the substrate by patterning the photoresist film;
- forming an optical transmittance control film over the entire surface of the resultant structure;
- and
- forming an optical transmittance control film pattern over the optical transmission area between edges of the opaque mask pattern by etching away the patterned photoresist film using a lift-off process.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an array of opaque mask patterns on a substrate which define a grid-shaped optical transmission area between adjacent opaque mask pattern;
- and,
- forming an optical transmittance control fill over a portion of the grid-shaped optical transmission area.
Dependencies are inferred from the claim text.