Solid state image device having a transparent Schottky electrode

A solid state image device, comprising:

• a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impurity region which is selectively formed on the surface of a P(or N)-type semiconductor region at the surface of a semiconductor substrate, means for executing electronic scanning which is disposed in parallel to said row of photosensitive devices, and a read-out gate in which a signal charge is transferred from said photosensitive devices to said means for executing electronic scanning;
• wherein a P(or N)-type impurity region is formed on said first N(or P)-type impurity region except a first portion adjacent to said read-out gate region, said P(or N)-type impurity region is connected to a P.sup.+ (or N.sup.+)-type element separating region which surrounds said first N(or P)-type impurity region, and a transparent Schottky electrode is formed on said first N(or P)-type impurity region except a second portion adjacent to said read-out gate region, said second portion being greater than said first portion adjacent to said read-out gate region, said Schottky electrode is electrically connected to said P.sup.+ (or N.sup.+)-type element separating region which surrounds said first N(or P)-type impurity region and has an impurity concentration and thickness in said P(or N)-type impurity region that are formed such that a diffusion potential between said Schottky electrode and said first N(or P)-type impurity region is lower than a diffusion potential between said first N(or P)-type impurity region and said P(or N)-type semiconductor region.