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AssigneeMitsubishi Cable Industries, Ltd.
InventorsHiroaki Okagawa, Takayuki Hashimoto, Keiji Miyashita, Tomoo Yamada, Kazuyuki Tadatomo
Estimating the term…
A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part comprising an n-type cladding layer composed of an InGaAlP compound semiconductor material, an active layer and a p-type cladding layer formed in that order from the substrate side by double heterojunction, wherein said semiconductor light emitting element satisfies at least one of the following conditions: A. the thickness of said active layer being greater than 0.75 .mu.m and not more than 1.5 .mu.m, and B. the thickness of said p-type cladding layer being 0.5 .mu.m-2.0 .mu.m. According to the light emitting element of the present invention, an overflow of electron into the p-type cladding layer can be suppressed by setting the thickness of the active layer and the p-type cladding layer to fall within the above-mentioned specific ranges, as a result of which the element shows luminous efficiency peaked within the specified range.
A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part composed of an InGaAlP compound semiconductor material, said light emitting part comprising an n-type cladding layer, an active layer and a p-type cladding layer in this order from the substrate side to form a double heterojunction, and said active layer having a thickness of greater than 0.75 .mu.m and not more than 1.5 .mu.m.
A semiconductor light emitting element comprising an n-type semiconductor substrate and a light emitting part composed of an InGaAlP compound semiconductor material, said light emitting part comprising an n-type cladding layer, an active layer and a p-type cladding layer in this order from the substrate side to form a double heterojunction, said active layer having a thickness of greater than 0.75 .mu.m and not more than 1.5 .mu.m, and said p-type cladding layer having a thickness of 0.5-2.0 .mu.m.
Dependencies are inferred from the claim text.