Optoelectronic integrated device having optical elements and electronic elements grown in a monolithic form on a GaAs ssubstrate

Abstract

In an optoelectronic integrated device having an optical element section in the wavelength region of 1.33 to 1.55 .mu.m and an electronic element section such as an HEMT integrated in a monolithic form on a GaAs substrate, the optical element section includes light receiving elements or light emitting elements, and an optical absorption layer of the light receiving element or a semiconductor layer forming an active layer of the light emitting element is formed of GaAsN-series compound semiconductor which is lattice-matching with the GaAs substrate, particularly, one of GaAsN, InGaAsN, InGaAsPN, GaAlAsN, InGalAsN, AlGaAsPN and InGaAlAsPN.

Dependencies are inferred from the claim text.