Photomultiplier having a photocathode comprised of semiconductor material
AssigneeHamamatsu Photonics K.K.
InventorsMinoru Niigaki, Toru Hirohata, Tomoko Suzuki, Masami Yamada
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AssigneeHamamatsu Photonics K.K.
InventorsMinoru Niigaki, Toru Hirohata, Tomoko Suzuki, Masami Yamada
Estimating the term…
A photoelectric emission surface which is excellent in stability and reproducibility of photoelectric conversion characteristics and has a structure capable of obtaining a high photosensitivity is provided. A predetermined voltage is applied between an upper surface electrode and a lower surface electrode by a battery. Upon application of this voltage, a p-n junction formed between a contact layer and an electron emission layer is reversely biased. A depletion layer extends from the p-n junction into the photoelectric emission surface, and an electric field is formed in the electron emission layer and a light absorbing layer in a direction for accelerating photoelectrons. When incident light is absorbed in the light absorbing layer to excite photoelectrons, the photoelectrons are accelerated by the electric field toward the emission surface. The photoelectrons obtain an energy upon this electric field acceleration, and are transited, in the electron emission layer, to a conduction band at a higher energy level, and emitted into a vacuum.
A photomultiplier having a photocathode for emitting electrons in correspondence with light incident on said photocathode, wherein said photocathode comprises:
A photomultiplier having a photocathode for emitting electrons in correspondence with light incident on said photocathode, wherein said photocathode comprises:
A photocathode comprising:
Dependencies are inferred from the claim text.