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AssigneeSumitomo Chemical Company, Limited
InventorsYasushi Iyechika, Noboru Fukuhara, Tomoyuki Takada, Yoshinobu Ono
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The invention provides an electrode material having the low contact resistance against a III-V group compound semiconductor, thereby realizing a light emitting device having a high luminance and driven at low voltages. The electrode material of the invention is applied to a III-V group compound semiconductor, which is expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, and doped with p-type impurities. The electrode material comprises an alloy of Au and at least one metal selected from the group consisting of Mg and Zn.
An electrode device which comprises a first electrode of an alloy of AU and at least one metal selected from the group consisting of Mg and Zn, said first electrode being provided on a III-V group compound semiconductor expressed as a general formula of In.sub.x Ga.sub.y Al.sub.z N, where x+y+z=1, 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, and 0.ltoreq.z.ltoreq.1, said compound semiconductor being doped with p-type impurities, and a second metal electrode deposited on a portion of said first electrode and a portion of said semiconductor.
Dependencies are inferred from the claim text.