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US 5,708,281 AGranted
Semiconductor device and photoelectric conversion apparatus using the same
AssigneeCanon Kabushiki Kaisha
InventorMasakazu Morishita
Life of this patent
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Abstract
A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or single crystalline Si.sub.1-x C.sub.x (x.ltoreq.0.5) is formed on a region formed by the Si of said emitter. A junction between a region of the Si and a region of the polycrystalline and the single crystalline Si.sub.1-x C.sub.x is a graded hetero junction.
Claims8
A semiconductor device comprising:
- (a) an electrode;
- (b) an emitter region of a first conductivity type comprising a first emitter region;
- a second emitter region and a third emitter region, wherein the first and third emitter regions have the same constant energy band gap and the second emitter region sandwiched between the first and the third emitter regions has a wider energy band gap than said first and third emitter regions;
- (c) a base region of a second conductivity type having a constant energy band gap adjacent said emitter region on a side of said emitter region opposite to said electrode, wherein said first and third emitter regions and said base region have the same energy band gap;
- and
- (d) a collector region of the first conductivity type adjacent to said base region, wherein a portion of said second emitter region having a thickness sufficient to provide a linear change in energy band gap width different from a non-linear change in energy band gap obtained with a thickness less than 50 .ANG..
3 more elements
Dependencies are inferred from the claim text.