Thermoelectric semiconductor material
AssigneeKabushiki Kaisha Ohara
InventorsYasuo Ochi, Kazuo Ohara
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Abstract
A thermoelectric semiconductor material is used for thermoelectric conversion in a thermoelectric conversion device. The material comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, the double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.
Claims18
A thermoelectric converting method utilizing as a thermoelectric conversion material a material that comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, said double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.
A thermoelectric device comprising:
- at least a pair of p and n type of thermoelectric semiconductor members which are connected to each other at one end thereof and separated from each other at another end;
- and
- at least a pair of separate electrodes mounted to the thermoelectric semiconductor members at the other end;
- wherein at least one member of the at least one pair of thermoelectric semiconductor members comprises a double oxide having one of a normal spinel crystal structure and an inverse spinel crystal structure, said double oxide comprising a composition that is represented by MIn.sub.2 O.sub.4, wherein M represents a metal element that can be changed into a divalent ion.
Dependencies are inferred from the claim text.