Method for fabricating a semiconductor laser diode

A method for fabricating a semiconductor laser diode including a substrate, a first clad layer, an active layer and a second clad layer, the method comprising the steps of:

• growing the first clad layer on the substrate;
• growing the active layer on the first clad layer;
• growing the second clad layer on the active layer;
• forming a dielectric layer on the second clad layer;
• selectively removing the dielectric layer to expose a portion of the second clad layer;
• selectively removing the first clad layer, the active layer, and the second clad layer by liquid phase etching using the dielectric layer as a mask;
• and
• regrowing a semiconductor layer on the removed portion by liquid phase epitaxy.