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US 5,707,890 AGranted
Method of shifting a wavelength in a semiconductor structure having quantum wells
AssigneeAlcatel
InventorsJean-Yves Emery, Leon Goldstein
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AssigneeAlcatel
InventorsJean-Yves Emery, Leon Goldstein
Estimating the term…
From a top face of a semiconductor structure of the III-V type, inter-diffusion of elements between the wells and the barriers of an internal quantum structure is hot induced. The inter-diffusion is performed in one segment of the structure only, namely a segment in which the characteristic wavelength is to be shifted so as to constitute an amplitude modulator, another segment of the structure including a Bragg grating so as to constitute a laser emitter. In accordance with the invention, the inter-diffusion is induced by a layer of indium maintained in contact with the top face by means of a dielectric encapsulation layer. The invention is applicable in particular to optical telecommunications.
A method of shifting a wavelength in a semiconductor structure having quantum wells, in which method elements are inter-diffused between at least one well and a barrier of a quantum structure, which structure is inside a III-V type semiconductor structure, the inter-diffusion being hot induced by an inducing material acting from a face of the semiconductor structure, wherein induced inter-diffusion operating conditions are selected to prevent doping materials contained in a confinement layer of said semiconductor structure from being diffused into the quantum structure, and wherein the inducing material is in the form of a layer of condensed substance maintained in contact with said face of the semiconductor structure.
Dependencies are inferred from the claim text.