Method of manufacturing a non-volatile random accessible memory device

Abstract

A composition of materials having ferromagnetic, piezoelectric, and electro-optical properties is disclosed. In the preferred embodiment, the composition of materials comprises a first layer of Pb.sub.(1-x-y) Cd.sub.x Si.sub.y, a second layer of Se.sub.(1-z) S.sub.z, and a third layer of Fe.sub.(1-w) Cr.sub.w, where x, y, z and w are values within the ranges of 0.09.ltoreq.x.ltoreq.0.11, 0.09.ltoreq.y.ltoreq.0.11, 0.09.ltoreq.x.ltoreq.0.11 and 0.18.ltoreq.w.ltoreq.0.30. Additionally, each of the layers contain at least one of the elements of Ag, Bi, O, and N. A random-accessible, non-volatile memory built using the invented composition of materials is also disclosed. This memory provides for storing two independent bits of binary information in a single memory cell. Each cell comprises two orthogonal address lines formed on the opposite surface of a Si substrate, a composition of materials of the present invention formed over each of the address lines, and an electrode formed over each composition of materials. The data is stored electromagnetically and retrieved as a piezoelectric voltage.

Dependencies are inferred from the claim text.