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US 5,707,746 AGranted
Thin film transistor device with advanced characteristics by improved matching between a glass substrate and a silicon nitride layer
AssigneeSharp Kabushiki Kaisha
InventorsYoshihumi Yaoi, Yoko Katsuya, Shuhei Tsuchimoto
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Abstract
A thin film semiconductor device including an insulating substrate; and a structure provided on the insulating substrate and including a silicon layer containing hydrogen diffused therein and a silicon nitride layer. The insulating substrate is formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg.sup.-1 or more or having a distortion point of 850.degree. C. or lower.
Claims14
A thin film semiconductor device, comprising:
- an insulating substrate formed of an insulating material having a thermal expansion coefficient of 2.6.times.10.sup.-6 deg..sup.-1 or more,
- a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer;
- and
- a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen,
- wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicon nitride layer.
2 more elements
A thin film semiconductor device, comprising:
- an insulating substrate formed of an insulating material having a distortion point of 850.degree. C. or lower,
- a thin film transistor provided on the insulating substrate, the thin film transistor including a silicon layer as an active layer;
- and
- a silicon nitride layer formed on the silicon layer, the silicon nitride layer including hydrogen,
- wherein the silicon layer is passivated with hydrogen diffused from the silicon nitride layer by annealing the silicone nitride layer.
2 more elements
Dependencies are inferred from the claim text.