Variable gap magnetoresistive transducer and method of making the same

A method of forming a magnetic transducer having an insulating gap layer spaced between a magnetic shield layer and a magnetoresistive layer, comprising the steps of:

• forming a first insulating layer above the magnetic shield layer;
• forming an opening having a cross-sectional profile sloping inwardly toward said magnetic shield layer in said first insulating layer by selectively etching more material farther from the magnetic shield layer than adjacent to the magnetic shield layer;
• and
• forming a second insulating layer over said opening and above said first insulating layer, wherein said first and second insulating layers constitute the insulating gap layer spaced between the magnetic shield layer and the magnetoresistive layer.

A method of forming a magnetic transducer having a first magnetic shield layer and a magnetoresistive layer comprising the steps of:

• forming a primary insulating layer above the first magnetic shield layer;
• forming a secondary insulating layer completely above said primary insulating layer;
• forming a photoresist layer over said secondary insulating layer;
• forming an opening through said photoresist layer;
• etching said primary and secondary insulating layers using an etchant which etches said secondary insulating layer faster than said primary insulating layer;
• removing said photoresist layer;
• forming a third insulating layer above said opening and said secondary insulating layer;
• and
• forming a second shield layer over said third insulating layer, wherein said primary, secondary and third insulating layers constitute insulating gap layers disposed between the magnetoresistive layer and the magnetic shield layers.

A method of forming a magnetic transducer having a magnetic shield layer and a magnetoresistive layer comprising the steps of:

• forming a first insulating layer of rich oxygen aluminum oxide above the magnetic shield layer;
• forming a photoresist layer over said first insulating layer;
• forming an opening through said photoresist layer;
• etching said photoresist layer and said first insulating layer simultaneously using an etchant which etches said photoresist layer comparatively faster than said first insulating layer;
• removing said photoresist layer;
• and
• forming a second insulating layer over said opening and above said first insulating layer, wherein said first and second insulating layers constitute an insulating gap layer disposed between the magnetoresistive layer and the magnetic shield layer.