Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises silicon;
• forming a resist pattern on said carbon film;
• etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern;
• and
• reactive ion etchings of said layer along said carbon film pattern, with a plasma of a gas comprising a halogen or a halogen bearing compound;
• wherein said plasma is produced by a member selected from the group consisting of:
• (i) application of an alternating current and a magnetic field,
• (ii) application of microwaves
• (iii) irradiation by an electron beam,
• (iv) application of a radio frequency of 27 MHz or more, and
• (v) application of an inductively coupled high frequency;
• wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a carbon film on a layer, wherein said layer is on a substrate, and said layer comprises aluminum;
• forming a resist pattern on said carbon film;
• etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern;
• and
• reactive ion etching said layer along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound;
• wherein said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V.

A method of manufacturing a semiconductor device, comprising the steps of:

• forming a carbon film on a substrate;
• forming a resist pattern on said carbon film;
• etching said carbon film along said resist pattern, with a gas comprising oxygen or an oxygen bearing compound, to form a carbon film pattern;
• and
• reactive ion etching said substrate along said carbon film pattern, with a plasma of a gas comprising a member selected from the group consisting of chlorine, bromine, a chlorine bearing compound and a bromine bearing compound;
• wherein said plasma is produced by a member selected from the group consisting of
• (i) application of an alternating current and a magnetic field
• (ii) application of microwaves,
• (iii) irradiation by an electron beam,
• (iv) application of a radio frequency of 27 MHz or more, and
• (v) application of an inductively coupled high frequency;
• and
• wherein either:
• (a) a surface of said substrate comprises aluminum, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 200V;
• or
• (b) a surface of said substrate comprises silicon, and said reactive ion etching is carried out under conditions such that there is a DC voltage across said plasma and said substrate of less than 100V.