Device for producing SiC single crystals

A device for producing single crystals from a solid SiC supply, including a plurality of seed crystals, each seed crystal having a crystallization surface, wherein the device comprises:

• a) at least one reaction chamber, wherein the seed crystals are arranged for growing single SiC crystals out of a gas phase;
• b) at least one supply chamber, wherein each of said at least one supply chamber is at least partially filled with the supply of solid SiC;
• c) at least one homogenization chamber;
• d) at least one first gas channel connecting the at least one homogenization chamber to the at least one supply chamber;
• e) a plurality of second gas channels connecting the homogenization chamber to the reaction chamber, wherein each second gas channel is directed to a corresponding seed crystal;
• and
• f) at least one heating device for producing SiC in the gas phase from the SiC supply in the at least one supply chamber, for controlling the temperature in the at least one homogenization chamber, and for adjusting a temperature distribution in the at least one reaction chamber.