Integrated optical arrangement of ridge waveguides on a substrate
AssigneeSiemens Aktiengesellschaft
InventorsGustav Mueller, Lothar Stoll, Ulrich Wolff, Bruno Acklin
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AssigneeSiemens Aktiengesellschaft
InventorsGustav Mueller, Lothar Stoll, Ulrich Wolff, Bruno Acklin
Estimating the term…
An integrated optical arrangement operated as a switch composed of at least three ridge waveguides on a substrate, the third ridge waveguide is utilized for an infeed of an optical waveguide proceeding between two parallel ridge waveguides forming the first and second waveguides having either a contacted pn-junction or a contacted pin-junction. As a result of asymmetrical switching of the junctions, the optical wave is coupled over into one or the other of the first and second waveguides. The advantage over traditional directional coupler switch structures are complete symmetry of the two switch conditions, "digital switching behavior", enhanced separation of the output waveguide, low switching losses and greater manufacturing tolerances, reduced polarization sensitivity and increased optical bandwidth.
In an integrated optical arrangement composed of first and second strip-like ridge waveguides on a substrate of semiconductor material, each of said ridge waveguides being defined by an undoped or an n-doped waveguiding layer of semiconductor material on or in the substrate and by a strip-shaped ridge of semiconductor material that is fashioned on and over the waveguiding layer and defines a width of the strip-shaped ridge waveguide, each of said strip-shaped ridges of the first waveguide and the strip-shaped ridges of the second waveguide proceeding side-by-side separated by an interspace, and wherein externally contactable junctions selected from a group consisting of pn-junctions of p-doped and n-doped material and pin-junctions of p-doped and n-doped material separated by a layer of undoped material being integrated in the region of the strip-shaped ridge of each of the ridge waveguides above and below the waveguiding layer of the ridge waveguide and being integral so that the junction of p-doped to n-doped or undoped material is arranged at a distance from the waveguiding layer and the p-doped material is arranged at the side of the junction facing away from the waveguiding layer and wherein each of the junctions of both the first and second waveguides is contactable, the improvements comprising a third strip-shaped ridge waveguide being arranged in the interspace between the ridges of the first and second ridge waveguide, said third strip waveguide being defined by a waveguiding layer in the substrate and by a strip-shaped ridge fashioned over the waveguiding layer defining a width of said third ridge waveguide, said third strip-shaped ridge being a slight distance from the ridge of the first ridge waveguide and from the ridge of the second ridge waveguide, the junctions of the first ridge waveguide and the second ridge waveguide extend at least over a common longitudinal section of the three ridge waveguides in which the first, second and third ridge waveguides proceed simultaneously side-by-side and the junctions of the first and second ridge waveguides are contacted over the entire length of said common longitudinal section so that an optical mode guided in the waveguiding layer under the ridge of the third ridge waveguide is selectively coupled over into one of the waveguiding layer under the ridge of the first and second ridge waveguides and an optical mode guided in the waveguiding layer under the ridge of the first and second ridge waveguides is selectively coupled into the waveguiding layer under the ridge of the third ridge waveguide.
A method of operating an integrated optical arrangement comprising the step of providing an arrangement having a first and second strip-like ridge waveguide on a substrate of semiconductor material, with a third strip-like ridge waveguide arranged therebetween, each of said ridge waveguides being defined by a waveguiding layer selected from undoped and n-doped semiconductor material on the substrate and a strip-shaped ridge of semiconductor material that is fashioned on and over the waveguiding layer and defining a width of the strip-like ridge, each of the strip-shaped ridges of the first, second and third strip-shaped ridges proceeding side-by-side separately, the first and second ridge waveguides having an externally contactable junction selected of a pn-junction with a p-doped to n-doped material and a pin-junction of a p-doped material and n-doped material separated by an undoped layer of material, each of the junctions of the ridges of the first and second waveguides being arranged with the p-doped layer at a distance from the waveguiding layer and the p-doped material being arranged on that side of the junction facing away from the waveguiding layer, and the junctions of both the first and second waveguides being contacted, and asymmetrically operating the junctions of the first and second waveguides wherein the junctions of one of the first and third ridge waveguides is in a conducting direction while the other of the first and second ridge waveguides is in a currentless and blocking direction.
Dependencies are inferred from the claim text.