VCSEL with distributed Bragg reflectors for visible light

A VCSEL with distributed Bragg reflectors for visible light comprising:

• a semiconductive substrate having a first surface and a second surface;
• a first distributed Bragg reflector disposed on the first surface of the semiconductor substrate, the first distributed Bragg reflector including alternating layers of indium aluminum gallium phosphide and aluminum arsenide with a percent composition of indium in the indium aluminum gallium phosphide ranging from 44 percent to 54 percent and a percent composition of gallium in the indium aluminum gallium phosphide ranging from 41 percent to 61 percent, and with the first distributed Bragg reflector having a first dopant type and a first concentration;
• a first cladding region disposed on the first distributed Bragg reflector;
• an active region disposed on the cladding region;
• a second cladding region disposed on the active region;
• a second distributed Bragg reflector disposed on the second cladding region, the second distributed Bragg reflector including alternating layers of indium aluminum gallium phosphide and aluminum arsenide with a percent composition of indium in the indium aluminum gallium phosphide ranging from 44 percent to 54 percent and a percent composition of gallium in the indium aluminum gallium phosphide ranging from 41 percent to 61 percent, and with the second distributed Bragg reflector having a second dopant type and a second dopant concentration;
• and
• a contact region disposed on the second distributed Bragg reflector, whereby light generated in the active region emanates from the VCSEL as visible light.