Semiconductor light exposure apparatus

The semiconductor light exposure apparatus comprising:

• an excitation light source for generating an excitation light beam;
• light beam generating means excited by said excitation light beam for generating a fundamental wavelength laser light beam, said light beam generating means including a first resonator having a first non-linear optical crystal element for wavelength-converting the fundamental wavelength laser light beam into a second-order harmonics laser light beam and a second resonator having a second non-linear optical crystal element for converting, the second-order harmonics laser light beam into a fourth-order harmonics laser light beam;
• control means for controlling an output of said excitation light source in order to control an output level of the fourth-order harmonics laser light beam from said light beam generating means, wherein said control means controls said excitation light source so that the laser light beam output from said light beam generating means exposes a photosensitive coating film on a wafer during a period of light exposure on the wafer, and wherein said control means controls said excitation light source so that the laser light beam output from said light beam generating means has an output level necessary for maintaining stable oscillations of the excitation light source after the end of said period of light exposure until the start of a succeeding period of light exposure;
• a contracting optical system for projecting a pattern of the fourth-order harmonics laser light beam output from said light beam generating means a contracted size on the wafer;
• and
• means for interrupting the fourth-order harmonics laser light output from said light beam generating means, wherein said control means controls said interrupting means after the end of said period of light exposure for the wafer, and wherein said control means controls said interrupting means before the start of a succeeding period of light exposure.

A semiconductor light exposure apparatus comprising:

• an excitation light source for generating an excitation light beam;
• light beam generating means having a first resonator, a second resonator and light volume controlling means, wherein
• said first resonator has a laser medium excited by a laser light beam radiated from said excitation light source and a first non-linear optical crystal element for generating a second-order harmonic laser light beam according to a fundamental wavelength laser light beam radiated from said laser medium,
• said second resonator has a second non-linear optical crystal element for generating a fourth-order harmonics laser light beam in response to the second-order harmonics laser light beam from said first resonator, and
• said light volume controlling means controls the output of said excitation light source to control the output of the fourth-order harmonics laser light beam from said second resonator wherein said light volume controlling means controls said excitation light source so that the laser light beam output from said light beam generating means exposes a photosensitive coating film on a wafer during a period of light exposure on the wafer, and wherein said light volume controlling means further controls said excitation light source so that the laser light beam output from said light beam generating means has an output level necessary for maintaining stable oscillations of said excitation light source after the end of said period of light exposure until the start of a succeeding period of light exposure;
• a contracting optical system for contracting the size of a pattern on a reticle and projecting the pattern on the wafer by the fourth-order harmonics laser light beam output by said light beam generating means;
• position controlling means for controlling a light exposure position of the wafer on said con acting optical system;
• and
• means for interrupting the fourth-order harmonics laser light beam from said light beam generating means, wherein said light volume controlling means controls said interrupting means after the end of said period of light exposure for the wafer, and wherein said light volume controlling means controls said interrupting means after the positioning of the wafer by said position controlling means with respect to said contracting optical system and before the start of a succeeding period of light exposure.

A semiconductor light exposure apparatus comprising:

• a laser light source unit for providing a fourth-order harmonics laser light beam having an intensity distribution, said laser light source unit including:
• a fourth harmonics wave generator for providing said fourth harmonic laser light beam, and
• a light volume controller for adjusting the light volume of said fourth harmonics laser light beam and providing a first adjusted laser light beam;
• a uniforming unit for receiving said fourth order harmonics laser light beam, for uniforming the intensity distribution of said fourth-order harmonics laser light beam, and for providing an output;
• a light exposure unit for receiving the output of said uniforming unit and for providing a contracted pattern on a wafer;
• a position control unit for forming the contracted pattern at a desired position on said wafer;
• and
• a shutter receiving said first adjusted laser light beam, said shutter being controlled by said light volume controller to be periodically opened and closed to output said first adjusted laser light beam.

A semiconductor light exposure apparatus comprising:

• a laser light source unit for providing a fourth-order harmonics laser light beam having an intensity distribution, said laser light source unit including:
• an excitation light source for generating an excitation laser light beam,
• a wave generating unit for receiving said excitation light beam and generating a fundamental wavelength laser light beam,
• second harmonic generating means for receiving said fundamental wavelength laser light beam and providing a second harmonic laser light beam therefrom, said second harmonic generating means having:
• a first non-linear optical crystal element for wavelength-converting said fundamental wavelength laser light beam into said second harmonic laser light beam, and
• first mirror means for generating resonation at the wavelength of said fundamental wavelength laser light beam, said first mirror means further having
• a first concave mirror for reflecting said fundamental wavelength laser light beam and said second harmonic laser light beam, and
• planar mirror means for reflecting said fundamental wavelength laser light beam and transmitting said second harmonic laser light beam;
• phase modulation means for modulating the phase of said second harmonic light beam and for providing a modulated second harmonic laser light beam,
• fourth harmonic generating means for converting the wavelength of said modulated second harmonic laser light beam into a fourth harmonic laser light beam, and
• control means for detecting the light volume of said fourth harmonic laser light beam and controlling said fourth harmonic generating means in response to said detected light volume;
• a uniforming unit for receiving said fourth-order harmonics laser light beam, for uniforming the intensity distribution of said fourth-order harmonics laser light beam, and for providing an output;
• a light exposure unit for receiving the output of said uniforming unit and for providing a contracted pattern on a wafer;
• and
• a position control unit for forming the contracted pattern at a desired position on said wafer.

A semiconductor light exposure apparatus comprising:

• a laser light source unit for providing a fourth-order harmonics laser light beam having an intensity distribution, said laser light source unit including:
• an excitation light source for generating an excitation laser light beam,
• a wave generating unit for receiving said excitation light beam and generating a fundamental wavelength laser light beam,
• second harmonic generating means for receiving said fundamental wavelength light beam and providing a second harmonic laser light beam therefrom,
• phase modulation means for modulating the phase of said second harmonic laser light beam and for providing a modulated second harmonic laser light beam,
• fourth harmonic generating means for converting the wavelength of said modulated second harmonic laser light beam into a fourth harmonic laser light beam,
• control means for detecting the light volume of said fourth harmonic laser light beam and controlling said fourth harmonic generating means in response to said detected light volume, and
• said phase modulation means having a phase modulator for phase-modulating said second harmonic laser light beam in order to detect the light volume of said control means, and an optical isolator for preventing reversion of said second harmonic laser light beam incident on said phase modulator;
• a uniforming unit for receiving said fourth-order harmonics laser light beam, for uniforming the intensity distribution of said fourth-order harmonics laser light beam, and for providing an output;
• a light exposure unit for receiving the output of said uniforming unit and for providing a contracted pattern on a wafer;
• and
• a position control unit for forming the contracted pattern at a desired position on said wafer.

A semiconductor light exposure apparatus comprising:

• a laser light source unit for providing a fourth-order harmonics laser light beam having an intensity distribution, said laser light source unit including:
• an excitation light source for generating an excitation laser light beam,
• a wave generating unit for receiving said excitation light beam and generating a fundamental wavelength laser light beam,
• second harmonic generating means for receiving said fundamental wavelength light beam and providing a second harmonic laser light beam therefrom,
• phase modulation means for modulating the phase of said second harmonic light beam and for providing a modulated second harmonic laser light beam,
• fourth harmonic generating means for converting the wavelength of said modulated second harmonic laser light beam into said fourth harmonic laser light beam, said fourth harmonic generating means having:
• a second non-linear optical crystal element for wavelength-converting said second harmonics laser light beam into said fourth harmonics laser light beam,
• third mirror means for transmitting said fourth harmonics laser light beam, and
• second mirror means for increasing the laser light of said fourth harmonics laser light beam, said second mirror means further having two planar mirrors for transmitting said fourth harmonics laser light beam, each of said planar mirrors facing said third mirror means, and
• control means for detecting the light volume of said fourth harmonic laser light beam and controlling said fourth harmonic generating means in response to said detected light volume;
• a uniforming unit for receiving said fourth-order harmonics laser light beam, for uniforming the intensity distribution of said fourth-order harmonics laser light beam, and for providing an output;
• a light exposure unit for receiving the output of said uniforming unit and for providing a contracted pattern on a wafer;
• and
• a position control unit for forming the contracted pattern at a desired position on said wafer.