LC element comprising a reverse biased pn junction

An LC element comprising

• an inductor electrode having a spiral shape formed on a surface of a semiconductor substrate, and
• a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
• said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region and functions as a capacitor when used in the reverse bias state,
• said first region is directly connected to said inductor electrode,
• said inductor electrode and said second region respectively comprise inductors,
• a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
• first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
• a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

An LC element comprising:

• an inductor electrode having a predetermined shape formed on a surface of a semiconductor substrate, and
• a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
• said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
• said first region is directly connected to said inductor electrode,
• said inductor electrode and said second region respectively comprise inductors,
• a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
• first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of said pn junction layer, and
• a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

An LC element comprising:

• an inductor electrode having a meander shape formed on a surface of a semiconductor substrate, and
• a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
• said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
• said first region is directly connected to said inductor electrode,
• said inductor electrode and said second region respectively comprise inductors,
• a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
• first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
• a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

An LC element comprising:

• an inductor electrode having a curved line shape formed on a surface of a semiconductor substrate, and
• a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
• said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
• said first region is directly connected to said inductor electrode,
• said inductor electrode and said second region respectively comprise inductors,
• a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
• first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
• a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

An LC element comprising:

• an inductor electrode having a straight line shape formed on a surface of a semiconductor substrate, and
• a pn junction layer having a predetermined shape formed at a position along said inductor electrode in a portion of said semiconductor substrate, wherein
• said pn junction layer comprises a first region comprising one of a p region and an n region and a second region in direct contact with the substrate and lying between the substrate and the first region and comprising an inverted region with respect to said first region, and functions as a capacitor when used in the reverse bias state,
• said first region is directly connected to said inductor electrode,
• said inductor electrode and said second region respectively comprise inductors,
• a distributed constant type capacitor is formed by said pn junction layer in correspondence to these inductors,
• first and second input/output electrodes connected to respective ends of one of said inductor electrode and the second region of the pn junction layer, and
• a ground electrode provided near only one end of the other one of said inductor electrode and the second region of said pn junction layer, wherein:
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

A method of making an LC element, comprising:

• forming an inductor electrode on a surface of a semiconductor substrate;
• forming a pn junction layer in a portion of the semiconductor substrate and along the inductor electrode;
• forming one of a first p region and a first n region in the pn junction layer;
• forming a second inverted region with respect to the first region in direct contact with the substrate and lying between the first region and the substrate;
• and
• forming a connection between the first region and the inductor electrode, wherein
• the second inverted region is not directly connected along its length to said inductor electrode.

A method of making an LC element, comprising:

• forming a pn junction layer in a portion of a semiconductor substrate;
• forming one of a first p region and a first n region in the pn junction layer;
• forming a second inverted region with respect to the first region;
• providing first and second electrodes near respective ends of one of the first region and the second region of the pn junction layer, wherein the second region is not electrically connected along its entire length to an inductor electrode;
• providing a ground electrode near only one end of the other of the first region and the second region of the pn junction layer;
• connecting at least one of a fixed potential power supply and a ground to the ground electrode;
• forming an insulation film on the entire surface of the semiconductor substrate;
• opening perforations in portions of the insulation film by one of etching and laser light emission;
• and
• closing the perforations by applying solder to the extent of protruding slightly from the surface.

An LC element formed in a portion of a semiconductor substrate comprising:

• a pn junction layer having a predetermined shape and functioning as a capacitor when used in a reverse bias state, said pn junction layer including a first region and a second region inverted with respect to the first region,
• first and second input/output electrodes provided near the respective ends of one of the first region and the second region comprising said pn junction layer, and
• a ground electrode provided near only one end of the other one of the first and second regions comprising said pn junction layer, wherein;
• inductors are respectively comprised by the first and second regions,
• a distributed constant type capacitor is formed by the pn junction layer,
• at least one of the first and second regions is used as a signal transmission line,
• a signal is input to one of said first input/output electrode and said second input/output electrode and output from the other one thereof, and
• said ground electrode is connected to at least one of a fixed potential power supply and a ground.

An LC element formed in a portion of a semiconductor substrate comprising:

• a pn junction layer having a predetermined shape and functioning as a capacitor when used in a reverse bias state, said pn junction layer including a first region and a second region inverted with respect to the first region,
• first and second electrodes provided only near respective ends of one of the first region and the second region comprising said pn junction layer, and
• third and fourth electrodes provided only near respective ends of the other one of the first and second regions comprising said pn junction layer, wherein;
• inductors are respectively comprised by the first and second regions,
• a distributed constant type capacitor is formed by the pn junction layer,
• the first and second regions of said pn junction layer respectively function as signal transmission lines, thereby enabling use as a common mode type element.

A method of making an LC element, comprising:

• forming a pn junction layer in a portion of a semiconductor substrate;
• forming one of a first p region and a first n region in the pn junction layer;
• forming a second inverted region with respect to the first region;
• providing first and second electrodes near respective ends of one of the first region and the second region of the pn junction layer;
• providing third and fourth electrodes near respective ends of the other one of the first region and the second region of the pn junction layer, wherein the second region is not electrically connected along its entire length to an inductor electrode;
• forming an insulation film on the entire surface of the semiconductor substrate;
• opening perforations in portions of the insulation film by one of etching and laser light emission;
• and
• closing the perforations by applying solder to the extent of protruding slightly from the surface.