Semiconductor device
AssigneeCasio Computer Co., Ltd.
InventorTakeshi Wakabayashi
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Abstract
A semiconductor device has a connection electrode and protective film formed of organic material and covering the connection electrode. An opening is formed in the protective film to expose the connection electrode. A natural oxide layer is etched by argon-based dry etching. The surface layer of the protective film is altered to reduce the insulativity in the dry etching process. After a projection electrode is formed on the connection electrode later, the altered surface layer of the protective film is removed by oxygen-based dry etching. As no altered surface layer remain on the protective film, an adverse affect such as inadequate insulation does not occur.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a connection electrode formed on a surface of said semiconductor substrate;
- an organic film formed on said semiconductor substrate, said organic film covering a periphery of said connection electrode and having an opening such that a middle part of a surface of said connection electrode is exposed through said opening;
- and
- a projection electrode formed on said connection electrode,
- wherein a predetermined portion of said organic film which covers said periphery of said connection electrode is located between said connection electrode and said projection electrode and an outer portion of said organic film around said predetermined portion of said organic film is one of (i) thinner than said predetermined portion and (ii) totally etched.
Dependencies are inferred from the claim text.