Efficient charge transfer structure in large pitch charge coupled device

In a charge coupled device having a plurality of output structures, the plurality of output structures including first, second and third output structures, a channel structure defined in a channel region beneath a gate electrode and coupled to each of the plurality of output structures, the channel structure comprising:

• a plurality of area structures, each area structure being characterized by a uniform potential which is different from the potential characterizing each of the other area structures, the plurality of area structures being arranged within the channel region to define a first increasing stepped potential gradient in a first gradient direction from a point within the channel region to the first output structure and to define a second increasing stepped potential gradient in a second gradient direction from the point within the channel region to the second output structure and to define a third increasing stepped potential gradient in a third gradient direction from the point within the channel region to the third output structure, the first gradient direction being non-parallel to the second gradient direction, the third gradient direction being non-parallel to both the first and second gradient directions.

In a charge coupled device having a plurality of output structures, the plurality of output structures including first and second output structures, the first output structure including first and second reset diodes, a channel structure defined in a channel region beneath a gate electrode and coupled to each of the plurality of output structures, the channel structure being formed with a first dopant species distributed non-uniformly therein so that the channel structure is characterized by a two-dimensional potential gradient, the two-dimensional potential gradient defining a first increasing potential gradient in a first gradient direction from a point within the channel region to the first output structure and a second increasing potential gradient in a second gradient direction from the point within the channel region to the second output structure, the first gradient direction being non-parallel to the second gradient direction, the first increasing potential gradient defines a path in a direction of increasing potential from the point within the channel region to a nearest one of the first reset diode and the second reset diode.