Semiconductor light-emitting device and production method thereof, and crystal-growing method suitable for the production method

A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate,

• wherein the semiconductor multi-layered structure comprises a Zn.sub.1-x Cd.sub.x Se.sub.1-y S.sub.y (0<x<0.5 and 0<y<0.5) active layer and a pair of Zn.sub.1-x' Cd.sub.x' S.sub.y' Se.sub.1-y' (0<x'<0.5 and 0<y'<0.5) guiding layers interposing the active layer;
• a mole fraction of Cd (x) in the active layer is larger than a mole fraction of Cd (x') in the guiding layers;
• a mole fraction of S (y) in the active layer is smaller than a mole fraction of S (y') in the guiding layers;
• a type I hetero junction is formed between the active layer and the guiding layers;
• and
• between the active layer and the guiding layers, a band offset of a valence band .DELTA.Ev and an entire band offset .DELTA.Eg satisfies a relationship of .DELTA.Ev/.DELTA.Eg>0.32.

A semiconductor light-emitting device comprising a GaAs substrate and a II-VI compound semiconductor multi-layered structure formed on the GaAs substrate,

• wherein the semiconductor multi-layered structure comprises a pair of guiding layers interposing an active layer, at least one of the guiding layers being formed by a (Zn.sub.1-x Cd.sub.x Se).sub.m (ZnS.sub.y Se.sub.1-y).sub.n superlattice (where m and n are integers);
• the active layer is formed of Zn.sub.1-u Cd.sub.u S.sub.v Se.sub.1-v (where 0<u<1, 0<v<1, x<u and y>v);
• a type I hetero junction is formed between the active layer and the guiding layers;
• and
• between the active layer and the guiding layers, a band offset of a valence band .DELTA.Ev and an entire band offset .DELTA.Eg satisfies a relationship of .DELTA.Ev/.DELTA.Eg>0.32.